Polishing member and semiconductor manufacturing method

ABSTRACT

A polishing member according to an embodiment includes a first polisher, a second polisher, and a third polisher. The first polisher is capable of rubbing a target surface. The second polisher is surrounded by the first polisher. A hole is located along an edge of the second polisher between the first polisher and the second polisher. The third polisher connects the first polisher and the second polisher.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior U.S. Provisional Patent Application No. 62/294,326 filed onFeb. 12, 2016, the entire contents of which are incorporated herein byreference.

FIELD

The embodiments of the present invention relate to a polishing memberand a semiconductor manufacturing method.

BACKGROUND

In a semiconductor manufacturing process, CMP (Chemical MechanicalPolishing) for polishing a polishing target film on a semiconductorsubstrate is performed. In the CMP, the polishing target film on thesemiconductor substrate is pressed against a polishing pad to which apolishing solution is supplied, and is polished.

To hold the polishing solution or to supply the held polishing solutionto a surface of a polishing layer of the polishing pad, grooves or holesare formed on the polishing layer.

The polishing pad having grooves can diffuse the polishing solutionuniformly on the surface of the polishing layer. However, the groovescannot be formed only partway through the polishing layer in the depthdirection to ensure a mechanical strength of the polishing layer. Due tosuch restriction in the depth of the grooves, the function of thegrooves to diffuse the polishing solution is declined when the depth ofthe grooves is decreased with depletion of the polishing layer bydressing. Therefore, the polishing pad having grooves adversely has ashort lifetime.

On the other hand, the holes can be formed to pass through the polishinglayer. Therefore, the holes are not lost even when the polishing layeris depleted by dressing and thus the polishing pad having holes has alonger lifetime. However, the conventional holes have a shape, such as acircular shape, that is not easily collapsed by frictional force of thepolishing and it is difficult to supply the polishing solutionefficiently to the surface of the polishing layer.

Therefore, the conventional polishing pad has a problem that thepolishing rate of a polishing target film is hard to increase.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view showing a polishing apparatus 1 according toa first embodiment;

FIG. 2A is a partial plan view showing a polishing pad according to thefirst embodiment, FIG. 2B is a sectional view along a line IIB-IIB inFIG. 2A, and FIG. 2C is an entire plan view showing the polishing pad;

FIG. 3 is an explanatory diagram of a dimension of the polishing padaccording to the first embodiment;

FIG. 4A is an explanatory diagram of a distance between through holes ofthe polishing pad according to the first embodiment, and FIG. 4B is anexplanatory diagram of a dimension of a polishing pad of a comparativeexample;

FIG. 5 is a flowchart showing a semiconductor manufacturing methodaccording to the first embodiment;

FIG. 6A is a sectional view showing a film forming process of a secondsilicon oxide film in the semiconductor manufacturing method accordingto the first embodiment, and FIG. 6B is a sectional view showing thesecond silicon oxide film after being polished;

FIG. 7 is a plan view showing a displaced state of second polishers in aprocess of polishing the second silicon oxide film in the semiconductormanufacturing method according to the first embodiment;

FIG. 8 is a plan view showing a polishing pad according to a secondembodiment; and

FIG. 9 is an explanatory diagram of a dimension of the polishing padaccording to the second embodiment.

DETAILED DESCRIPTION

A polishing member according to an embodiment includes a first polisher,a second polisher, and a third polisher. The first polisher is capableof rubbing a target surface. The second polisher is surrounded by thefirst polisher. A hole along an edge of the second polisher is presentbetween the first polisher and the second polisher. The third polisherconnects the first polisher and the second polisher.

Embodiments will now be explained with reference to the accompanyingdrawings. The present invention is not limited to the embodiments.

First Embodiment

An embodiment of a polishing member having through holes in a horseshoeshape is explained first as a first embodiment.

FIG. 1 is a schematic sectional view showing a polishing apparatus 1according to the first embodiment.

As shown in FIG. 1, the polishing apparatus 1 includes a polishing pad 2being an example of a polishing member, a polishing table 3, a holder 4,a supplier 5, drive sources 71 and 72, and a controller 8.

The polishing pad 2 is formed in a plate shape being circular in aplanar view. The polishing pad 2 polishes a surface (the lower surfacein FIG. 1) of a polishing target film 61 on a semiconductor substrate 6,which is an example of a target surface, using an upper surface as apolishing surface 22 a.

The polishing table 3 has a circular shape with a substantially samediameter as that of the polishing surface 22 a in a planar view. Thepolishing pad 2 is fixed to an upper surface of the polishing table 3 bya fixing method such as adhesion. The polishing table 3 is capable ofrotating in the direction of an arrow A1 around a center of thepolishing surface 22 a with drive force of the drive source 71 such as amotor. Due to rotation of the polishing table 3, the polishing pad 2 canrotate with the polishing table 3 in an integrated manner.

The holder 4 is, for example, a head (jig) that holds the semiconductorsubstrate 6. The holder 4 holds the entire semiconductor substrate 6. Asshown in FIG. 1, the holder 4 holds a rear surface of the semiconductorsubstrate 6 and causes a front surface of the polishing target film 61to face toward the polishing surface 22 a. The holder 4 then presses andrubs the polishing target film 61 against the polishing surface 22 a towhich a polishing solution is supplied to polish the front surface ofthe polishing target film 61.

More specifically, the holder 4 polishes the polishing target film 61while rotating in the direction of an arrow A2 with drive force of thedrive source 72 such as a motor. The holder 4 pushes the semiconductorsubstrate 6 downward d1 using a pushing apparatus (not shown) to causepolishing pressure to act on the polishing pad 2.

The supplier 5 includes a nozzle 51, a pipe 52, and a supply source 53of a polishing solution. The nozzle 51 is communicated with the supplysource 53 of the polishing solution via the pipe 52. The polishingsolution is a liquid to be used for polishing the polishing target film61 and generally includes abrasive particles, that is, abrasive grains.The polishing solution is also called slurry. The nozzle 51 supplies apolishing solution L supplied from the supply source 53 to the polishingsurface 22 a.

The controller 8 controls operations of respective working portions ofthe polishing apparatus 1, such as the drive sources 71 and 72, thesupplier 5, and the pushing apparatus of the holder 4.

To prevent the polishing pad 2 from being clogged with the polishingsolution, the polishing apparatus 1 can include a dresser that slits thepolishing pad 2.

FIG. 2A is a partial plan view showing the polishing pad 2 according tothe first embodiment. FIG. 2B is a sectional view along a line IIB-IIBin FIG. 2A. FIG. 2C is an entire plan view showing the polishing pad 2.

As shown in FIG. 2B, the polishing pad 2 has a cushion layer 21 and apolishing layer 22.

The cushion layer 21 is formed of, for example, a porous sheet such asnonwoven fabric.

The polishing layer 22 is placed on the cushion layer 21. An uppersurface of the polishing layer 22 is the polishing surface 22 a.

The polishing layer 22 is formed of, for example, a porous resinmaterial such as foamed polyurethane. Because being formed of a porousresin material, the polishing layer 22 can hold the abrasive particlesof the polishing solution.

To hold the polishing solution and supply the held polishing solution tothe polishing surface 22 a, the polishing layer 22 has a plurality ofthrough holes 23 passing through the polishing surface 22 a and a rearsurface 22 b as shown in FIGS. 2A to 2C. The through holes 23 arepositioned uniformly on the polishing layer 22. Specifically, thethrough holes 23 are positioned throughout the polishing layer 22. Sizesand shapes of the respective through holes 23 are the same. Shortestdistances between nearest ones of the through holes 23 are the same. Dueto uniform positioning of the through holes 23, the polishing solutionin the through holes 23 easily reaches all areas of the polishingsurface 22 a.

The sizes and the number of the through holes 23 in the polishing pad 2can be different from those in FIG. 2C.

The polishing layer 22 can have the same thickness as that of thecushion layer 21. For example, the thickness of the cushion layer 21 andthe polishing layer 22 can be 1.3 millimeters.

(First to Third Polishers 24 to 26)

FIG. 3 is an explanatory diagram of a dimension of the polishing pad 2according to the first embodiment.

As shown in FIGS. 2A and 3, the polishing layer 22 has a first polisher24, second polishers 25, and third polishers 26.

As shown in FIG. 2C, the first polisher 24 has a peripheral edge in acircular shape being concentric with the polishing pad 2 and having asame diameter as that of the polishing pad 2. The first polisher 24 canface the polishing target film 61 and polish the polishing target film61.

Specifically, the first polisher 24 polishes the polishing target film61 by rotating together with the polishing table 3 in a state where thepolishing target film 61 is pressed against the first polisher 24.

More specifically, the first polisher 24 polishes the polishing targetfilm 61 in a partial range 241 of the first polisher 24 between a firstcircle C1 and a second circle C2 as shown in FIGS. 2C and 1. The firstcircle C1 is a circle being concentric with the first polisher 24 andhaving a smaller diameter than that of the first polisher 24. The secondcircle C2 is a circle being concentric with the first polisher 24 andhaving a diameter larger than that of the first circle C1 and smallerthan that of the first polisher 24.

The second polishers 25 are surrounded by the first polisher 24. Thethrough holes 23 are located along edges 251. (see FIG. 3) of the secondpolishers 25 between the first polisher 24 and the second polishers 25,respectively. That is, the second polishers 25 are surrounded by thefirst polisher 24 to sandwich the through holes 23 with the firstpolisher 24 except for positions of the third polishers 26,respectively.

As shown in FIGS. 2A and 3, the through holes 23 according to the firstembodiment have a horseshoe shape, that is, a C-shape or a Landolt-ringshape in a planar view. Associated with the horseshoe shape of thethrough holes 23, the second polishers 25 according to the firstembodiment have a substantially circular shape along the through holes23 in a planar view.

When the polishing target film 61 is to be polished, the secondpolishers 25 are moved relative to the through holes 23 by frictionforce of the polishing acting between the second polishers 25 and thepolishing target film 61. Due to the movement relative to the throughholes 23, the second polishers 25 collapse the through holes 23 in therelative movement direction. Collapse of the through holes 23 causes thepolishing solution held in the through holes 23 to be pushed out of thethrough holes 23 and be supplied to the polishing surface 22 a.

The third polishers 26 connect the first polisher 24 and the secondpolishers 25. As shown in FIG. 2A, the third polishers 26 according tothe first embodiment are each interposed between both ends 23 a and 23 bof the corresponding through hole 23. Similarly to the first polisher 24and the second polishers 25, the third polishers 26 can polish thepolishing target film 61.

As shown in FIG. 3, a width of the third polisher 26 in a directionorthogonal to a central line 261 thereof is smaller than a width in thesame direction of the second polisher 25. More specifically, the widthof the third polisher 26 gradually decreases from a side of the firstpolisher 24 to a side of the corresponding second polisher 25 and asmallest width W1 of the third polisher 26 is smaller than a largestwidth W2 of the second polisher 25.

Specific dimensions of the through hole 23 and the second polisher 25are not particularly limited. For example, the smallest width W1 of thethird polisher 26 can be 1.3 millimeters. The largest width W2 of thesecond polisher 25 can be 2.6 millimeters. A width W3 of the throughhole 23 can be 0.4 millimeter. An outer diameter W4 of the through hole23 can be 3.4 millimeters.

FIG. 4A is an explanatory diagram of a distance between the throughholes 23 of the polishing pad 2 according to the first embodiment. FIG.4B is an explanatory diagram of a dimension of a polishing pad of acomparative example. FIG. 4B shows circular through holes 230 having asame cross-sectional area as that of the through holes 23 according tothe first embodiment. As shown in FIGS. 4A and 4B, a shortest distanceD_23 between the through holes 23 in the first embodiment is shorterthan a shortest distance D_230 of the through holes 230 in thecomparative example.

Specific numerical values of the cross-sectional area of the throughholes 23 and the distance D_23 are not particularly limited. Forexample, the cross-sectional area of the through holes 23 can be 3.14mm². The distance D_23 can be 2 millimeters.

Because the through holes 23 are locally positioned in the polishing padof the comparative example, stiffness of the polishing layer around thethrough holes 23 is high. Therefore, the through holes 230 are noteasily collapsed by frictional force of polishing. The polishing pad ofthe comparative example has a large distance D_230 between the throughholes 230.

Because the through holes 230 are not easily collapsed and the distanceD_230 is large, it is difficult to spread the polishing solution in thethrough holes 230 throughout the polishing surface in the polishing padof the comparative example.

In contrast thereto, in the polishing pad 2 according to the firstembodiment, the second polishers 25 are connected to the first polisher24 with the third polishers 26 more constricted and more fragile thanthe second polishers 25. Accordingly, frictional force of polishingacting on the second polishers 25 is superior to stiffness of the thirdpolishers 26. Therefore, the frictional force of polishing enables thethird polishers 26 to be deflected to move the second polishers 25relative to the through holes 23. Due to the relative movement of thesecond polishers 25, the through holes 23 can be easily collapsed.

Furthermore, in the polishing pad 2 according to the first embodiment,the through holes 23 are formed over a wide range to surround the secondpolishers 25, respectively. Therefore, the distance between adjacentones of the through holes 23 can be shortened.

Because the through holes 23 can be easily collapsed and the distancebetween adjacent ones of the through holes 23 can be shortened, thepolishing pad 2 according to the first embodiment can promptly spreadthe polishing solution in the through holes 23 throughout the polishingsurface 22 a. In this way, the polishing target film 61 can be polishedwith the polishing pad 2 promptly and uniformly.

Therefore, with the polishing pad 2 according to the first embodiment,the polishing rate of the polishing target film 61 can be increased(that is, the polishing time can be reduced). Furthermore, theuniformity in the film thickness (hereinafter, also “in-planeuniformity”) of the polishing target film 61 within the plane of a waferafter the polishing can be enhanced.

As shown in FIG. 2C, the through holes 23 are positioned at intervals inat least one of a radial direction d2 and a circumferential direction d3of the first polisher 24, respectively, to intersect with a circle C3having an arbitrary diameter equal to or larger than the diameter of thefirst circle C1 and equal to or smaller than the diameter of the secondcircle C2 and being concentric with the first polisher 24. That is, thearbitrary circle C3 between the first circle C1 and the second circle C2intersects with one or more through holes 23 among the through holes 23.

Due to the positioning of the through holes 23 intersecting with thearbitrary circle C3, the polishing solution in the through holes 23 canbe supplied to the polishing surface 22 a more promptly and moreuniformly in the range 241 of the first polisher 24 to be used forpolishing of the polishing target film 61. This can further enhance thepolishing rate and the in-plane uniformity.

The through holes 23 can alternatively intersect with an arbitrarycircle having a diameter equal to or smaller than that of the firstpolisher 24 and being concentric with the first polisher 24.

As shown in FIG. 2A, orientations of the third polishers 26 with respectto the second polishers 25 differ according to the second polishers 25.

More specifically, the orientations of the third polishers 26 withrespect to the second polishers 25 are different at least betweennearest ones of the second polishers 25. In the example shown in FIG.2A, one second polisher 25 has six nearest second polishers 25 aroundthe second polisher 25. Directions of the front, rear, right, and leftare defined as shown by arrows in FIG. 2A. A third polisher 26corresponding to one second polisher 25A in FIG. 2A is placed on thefront side of the second polisher 25A. In contrast thereto, thirdpolishers 26 corresponding to the six second polishers 25 nearest to thesecond polisher 25A are placed on the rear, left, and right sides of thesecond polishers 25.

More specifically, the second polishers 25 are nearest in a firstdirection d01, a second direction d02, and a third direction d03, whichare different by 60 degrees, respectively. Alternate third polishers 26along the first direction d01 corresponding to the second polishers 25nearest in the first direction d01 are placed in same orientations.Alternate third polishers 26 along the second direction d02corresponding to the second polishers 25 nearest in the second directiond02 are placed in opposite directions. Alternate third polishers 26along the third direction d03 corresponding to the second polishers 25nearest in the third direction d03 are placed in opposite directions.

Due to this placement of the third polishers 26, polishing frictionagainst respective parts of the polishing target film 61 can beuniformed and thus the in-plane uniformity can be further enhanced. Theorientations of the third polishers 26 with respect to the secondpolishers 25 are not limited to those shown in FIG. 2A. For example, thethird polishers 26 can be placed on right front, left front, right rear,and left rear sides of the corresponding polishers 25, respectively.

(Semiconductor Manufacturing Method)

An embodiment of a semiconductor manufacturing method to which thepolishing apparatus 1 shown in FIG. 1 is applied is explained next. FIG.5 is a flowchart showing a semiconductor manufacturing method accordingto the first embodiment. FIG. 6A is a sectional view showing a filmforming process of a second silicon oxide film 604 in the semiconductormanufacturing method according to the first embodiment. FIG. 6B is asectional view showing the second silicon oxide film 604 after beingpolished.

In the first embodiment, a semiconductor device that includes an elementisolation structure with the second silicon oxide film 604 ismanufactured as shown in FIG. 6B.

Specifically, a first silicon oxide film 601 shown in FIGS. 6A and 6B isfirst formed on a silicon substrate 600 being an example of thesemiconductor substrate 6 (Step S1 in FIG. 5). A film thickness of thefirst silicon oxide film 601 is not particularly limited and can be, forexample, 10 nanometers.

Next, a silicon nitride film 602 shown in FIGS. 6A and 6B are formed onthe first silicon oxide film 601 (Step S2 in FIG. 5). A film thicknessof the silicon nitride film 602 is not particularly limited and can be,for example, 50 nanometers.

Subsequently, trenches 603 shown in FIGS. 6A and 6B are formed in apredetermined element isolation region in the silicon substrate 60 onwhich the first silicon oxide film 601 and the silicon nitride film 602are stacked (Step S3 in FIG. 5). The trenches 603 can be formed, forexample, by photolithography and dry etching. A depth of the trenches603 is not particularly limited and can be, for example, 350 nanometersfrom the top surface of the silicon nitride film 602.

Next, as shown in FIG. 6A, the second silicon oxide film 604 is formedon the silicon nitride film 602 and the trenches 603 (Step S4 in FIG.5). Accordingly, the second silicon oxide film 604 is embedded in thetrenches 603 to be in contact with the silicon substrate 600, the firstsilicon oxide film 601, and the silicon nitride film 602. The secondsilicon oxide film 604 is formed also on the silicon nitride film 602.

Subsequently, the polishing apparatus 1 starts polishing the secondsilicon oxide film 604 (that is, the polishing target film 61) on thesilicon nitride film 602 (Step S5 in FIG. 5).

Specifically, the nozzle 51 supplies a polishing solution includingcerium oxide to the polishing surface 22 a of the polishing pad 2 thatis fixed on the polishing table 3. The holder 4 holding the siliconsubstrate 600 presses the second silicon oxide film 604 against thepolishing surface 22 a with polishing pressure applied by the pushingapparatus (not shown).

In a state where the second silicon oxide film 604 is pressed againstthe polishing surface 22 a, the drive sources 71 and 72 rotate thepolishing table 3 and the holder 4. The polishing pressure at that timeis not particularly limited and can be, for example, 210 hPa. Also therotational speed of the polishing table 3 is not particularly limitedand can be, for example, 80 r/min.

FIG. 7 is a plan view showing a displaced state of the second polishers25 in a process of polishing the second silicon oxide film 604 in thesemiconductor manufacturing method according to the first embodiment.

A part of the polishing solution supplied from the nozzle 51 to thepolishing surface 22 a flows into the through holes 23 and is held inthe through holes 23. When the second silicon oxide film 604 ispolished, the second polishers 25 are moved relative to the throughholes 23 by frictional force of the polishing. With the relativemovement, the second polishers 25 partially collapse the through holes23 surrounding the second polishers 25, respectively. Due to collapse ofthe through holes 23, the polishing solution held in the through holes23 is pushed out of the through holes 23 and is supplied promptly andefficiently throughout the polishing surface 22 a. This enables promptand uniform polishing of the silicon oxide film 604.

Next, as shown in FIG. 5, the controller 8 determines whether thesilicon nitride film 602 is exposed (Step S6). At that time, thecontroller 8 can determine that the silicon nitride film 602 is exposedby detecting a change in drive torque current of the polishing table 3occurring at a time of exposure of the silicon nitride film 602.

When the silicon nitride film 602 is exposed (YES at Step S6), thepolishing apparatus 1 finishes the polishing of the second silicon oxidefilm 604 (Step S7). In this way, a semiconductor device having thesilicon nitride film 602 exposed is obtained as shown in FIG. 66. Whenthe silicon nitride film 602 is not exposed (NO at Step S6), thecontroller 8 repeats the determination (Step S6).

As explained above, according to the semiconductor manufacturing methodof the first embodiment, the polishing rate and the in-plane uniformityof the polishing target film 61 can be enhanced with use of thepolishing pad 2 having the through holes 23 in a horseshoe shape. Thiscan increase the manufacturing efficiency and the yield rate of thesemiconductor device.

Second Embodiment

An embodiment of a polishing member having through holes in a spiralshape is explained next as a second embodiment. In the secondembodiment, constituent parts corresponding to those of the firstembodiment are denoted by like reference characters to simplifyexplanations.

FIG. 8 is a plan view showing the polishing pad 2 according to thesecond embodiment. FIG. 9 is an explanatory diagram of a dimension ofthe polishing pad 2 according to the second embodiment.

As shown in FIG. 8, the through holes 23 in the second embodiment have aspiral shape (that is, a helical shape) in a planar view. Because thethrough holes 23 have a spiral shape, the third polishers 26 have an arcshape in a planar view.

As shown in FIG. 9, the width W1 of the third polishers 26 is smallerthan the largest width W2 of the second polishers 25. The width W1 ofthe third polishers 26 can be constant. For example, the width W1 of thethird polishers 26 can be 0.4 millimeter and the largest width W2 of thesecond polishers 25 can be 1.5 millimeters. The width W3 of the throughholes 23 can be 0.4 millimeter and the outer diameter W4 of the throughholes 23 can be 3.3 millimeters.

In the second embodiment, similarly in the first embodiment, the secondpolishers 25 are connected to the first polisher 24 with the thirdpolishers 26 more constricted than the second polishers 25. The throughholes 23 are positioned over a wide range to surround the secondpolishers 25, respectively. Accordingly, the through holes 23 can beeasily collapsed by movement of the second polishers 25 relative to thecorresponding through holes 23 with frictional force of polishing. Thedistance between adjacent ones of the through holes 23 can be shortenedcompared to that in the through holes 230 (see FIG. 4B) of thecomparative example.

Therefore, also in the polishing pad 2 according to the secondembodiment, the polishing solution in the through holes 23 can be spreadpromptly throughout the polishing surface 22 a. This can enhance thepolishing rate and the in-plane uniformity also in the secondembodiment.

Furthermore, also in the second embodiment, the through holes 23 arepositioned at intervals in at least one of the radial direction d2 andthe circumferential direction d3 to intersect with the arbitrary circleC3 as shown in FIG. 8. This can further enhance the polishing rate andthe in-plane uniformity.

As shown in FIG. 8, the orientations of the third polishers 26 withrespect to the second polishers 25 differ at least between nearest onesof the second polishers 25 also in the second embodiment. Similarly inFIG. 2A, a second polisher 25 having the corresponding third polisher 26placed on the front side is denoted by reference character 25A in FIG.8. Accordingly, the in-plane uniformity can be further enhanced.

When the polishing pad 2 according to the second embodiment is appliedto manufacturing of the semiconductor device shown in FIG. 6B, themanufacturing efficiency and the yield rate can be increased similarlyin the first embodiment.

As described above, according to the second embodiment, the polishingpad 2 has the through holes 23 in a spiral shape. Therefore, thepolishing rate and the in-plane uniformity of the polishing target film61 can be enhanced.

The shape of the through holes 23 is not limited to the horseshoe shapeand the spiral shape as long as the shape enables formation of thesecond polishers 25 and the third polishers 26.

The present embodiments can be applied also to manufacture semiconductordevices other than that shown in FIG. 6B.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel methods and systems describedherein may be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the methods andsystems described herein may be made without departing from the spiritof the inventions. The accompanying claims and their equivalents areintended to cover such forms or modifications as would fall within thescope and spirit of the inventions.

1. A polishing member comprising: a first polisher capable of rubbing atarget surface; a second polisher surrounded by the first polisher, thesecond polisher having a hole along an edge of the second polisherbetween the second polisher and the first polisher; and a third polisherconnecting the first polisher and the second polisher.
 2. The member ofclaim 1, wherein a smallest width of the third polisher is smaller thana largest width of the second polisher.
 3. The member of claim 1,wherein the hole has a substantially horseshoe shape in a planar view.4. The member of claim 2, wherein the hole has a substantially horseshoeshape in a planar view.
 5. The member of claim 1, wherein the hole has asubstantially spiral shape in a planar view.
 6. The member of claim 2,wherein the hole has a substantially spiral shape in a planar view. 7.The member of claim 1, wherein the first polisher has a peripheral edgein a substantially circular shape and rubs the target surface in a rangeof the first polisher between a first circle concentric with the firstpolisher and a second circle having a larger diameter than that of thefirst circle and being concentric with the first polisher, a pluralityof the holes are located at intervals in at least one of a radialdirection and a circumferential direction of the first polisher tointersect with a circle being concentric with the first polisher andhaving an arbitrary diameter equal to or larger than the diameter of thefirst circle and equal to or smaller than the diameter of the secondcircle, and a plurality of the second polishers and a plurality of thethird polishers are provided to correspond to the through holes,respectively.
 8. The member of claim 2, wherein the first polisher has aperipheral edge in a substantially circular shape and rubs the targetsurface in a range of the first polisher between a first circleconcentric with the first polisher and a second circle having a largerdiameter than that of the first circle and being concentric with thefirst polisher, a plurality of the holes are located at intervals in atleast one of a radial direction and a circumferential direction of thefirst polisher to intersect with a circle being concentric with thefirst polisher and having an arbitrary diameter equal to or larger thanthe diameter of the first circle and equal to or smaller than thediameter of the second circle, and a plurality of the second polishersand a plurality of the third polishers are provided to correspond to thethrough holes, respectively.
 9. The member of claim 3, wherein the firstpolisher has a peripheral edge in a substantially circular shape andrubs the target surface in a range of the first polisher between a firstcircle concentric with the first polisher and a second circle having alarger diameter than that of the first circle and being concentric withthe first polisher, a plurality of the holes are located at intervals inat least one of a radial direction and a circumferential direction ofthe first polisher to intersect with a circle being concentric with thefirst polisher and having an arbitrary diameter equal to or larger thanthe diameter of the first circle and equal to or smaller than thediameter of the second circle, and a plurality of the second polishersand a plurality of the third polishers are provided to correspond to thethrough holes, respectively.
 10. The member of claim 5, wherein thefirst polisher has a peripheral edge in a substantially circular shapeand rubs the target surface in a range of the first polisher between afirst circle concentric with the first polisher and a second circlehaving a larger diameter than that of the first circle and beingconcentric with the first polisher, a plurality of the holes are locatedat intervals in at least one of a radial direction and a circumferentialdirection of the first polisher to intersect with a circle beingconcentric with the first polisher and having an arbitrary diameterequal to or larger than the diameter of the first circle and equal to orsmaller than the diameter of the second circle, and a plurality of thesecond polishers and a plurality of the third polishers are provided tocorrespond to the through holes, respectively.
 11. The member of claim2, wherein a plurality of the holes are located in a uniform positioningstate, and a plurality of the second polishers and a plurality of thethird polishers are provided to correspond to the holes, respectively.12. The member of claim 3, wherein a plurality of the holes are locatedin a uniform positioning state, and a plurality of the second polishersand a plurality of the third polishers are provided to correspond to theholes, respectively.
 13. The member of claim 5, wherein a plurality ofthe holes are located in a uniform positioning state, and a plurality ofthe second polishers and a plurality of the third polishers are providedto correspond to the holes, respectively.
 14. The member of claim 1,wherein a plurality of the holes are located, a plurality of the secondpolishers and a plurality of the third polishers are provided tocorrespond to the holes, respectively, and orientations of the thirdpolishers with respect to the second polishers are different betweennearest ones of the second polishers.
 15. The member of claim 2, whereina plurality of the holes are located, a plurality of the secondpolishers and a plurality of the third polishers are provided tocorrespond to the holes, respectively, and orientations of the thirdpolishers with respect to the second polishers are different betweennearest ones of the second polishers.
 16. The member of claim 3, whereina plurality of the holes are located, a plurality of the secondpolishers and a plurality of the third polishers are provided tocorrespond to the holes, respectively, and orientations of the thirdpolishers with respect to the second polishers are different betweennearest ones of the second polishers.
 17. The member of claim 5, whereina plurality of the holes are located, a plurality of the secondpolishers and a plurality of the third polishers are provided tocorrespond to the holes, respectively, and orientations of the thirdpolishers with respect to the second polishers are different betweennearest ones of the second polishers.
 18. The member of claim 7, whereinorientations of the third polishers with respect to the second polishersare different between nearest ones of the second polishers.
 19. Themember of claim 11, wherein orientations of the third polishers withrespect to the second polishers are different between nearest ones ofthe second polishers.
 20. A semiconductor manufacturing methodcomprising: pressing a target surface against a surface of a polishingmember comprising a first polisher capable of rubbing the targetsurface, a second polisher surrounded by the first polisher, the secondpolisher having a hole along an edge of the second polisher between thesecond polisher and the first polisher, and a third polisher connectingthe first polisher and the second polisher, supplying a polishingsolution to the surface of the polishing member and inside the hole, androtating the polishing member to rub the target surface, and moving thesecond polisher relative to the hole to supply the polishing solution inthe hole to the surface of the polishing member.